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プラズマ原子層堆積法で300 °C低温形成した強誘電体HfxZr1−xO2薄膜の疲労特性
(Endurance property of low-temperature (300 °C)-fabricated ferroelectric HfxZr1−xO2 thin films using plasma-enhanced atomic layer deposition)

女屋 崇, 生田目 俊秀, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, 澤本 直美, 長田 貴弘, R. M. Wallace, J. Kim, 小椋 厚志.
第67回応用物理学会春季学術講演会. March 12, 2020-March 15, 2020.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2020-03-18 03:00:19 +0900Updated at: 2020-03-18 03:00:19 +0900

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