HOME > Presentation > Detail
[11-20]方向のステップを持つSiC(0001)表面の初期グラフェン成長の第一原理分子動力学法による解明
(Initial Process of Graphene Growth on [11-20] Stepped 4H-SiC(0001) Surface Revealed by First-Principles Molecular Dynamics Simulation)
International Symposium on Epitaxial Graphene 2017 (ISEG-2017). 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-08-08 23:14:58 +0900Updated at: 2018-06-05 14:11:33 +0900