HOME > Presentation > DetailInterface trap states at p-GaN MO(I)S capacitors with different gate dielectricsSANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo, IWN2018. 2018.NIMS author(s)SANG, LiwenLIAO, MeiyongKOIDE, YasuoSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-01-11 03:00:24 +0900Updated at: 2020-01-11 03:00:24 +0900