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[Published patent application] α－Ｇａ２Ｏ３単結晶、α－Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
NIMS author(s)
Created at :2023-07-22 21:45:49 +0900 Updated at :2023-07-22 21:45:49 +0900
HOME > Published patent applications > Detail
