ε－Ｇａ２Ｏ３単結晶、ε－Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 | SAMURAI, NIMS Researchers Directory Service

Scheduled downtime (October 31st and November 1st, 2026) (2026-10-29)

HOME > Published patent applications > Detail

[Published patent application] ε－Ｇａ２Ｏ３単結晶、ε－Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子

2017-01-12. 2017007871 (Google Patents) , 6436538

NIMS author(s)

Created at :2023-07-22 21:45:50 +0900 Updated at :2023-07-22 21:45:50 +0900

▲ Go to the top of this page