Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

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Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Sudipta Dubey, Simone Lisi, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Yannick J. Dappe, Vladimir Cherkez, César González, WATANABE, Kenji, Goutham Nayak, TANIGUCHI, Takashi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat.

ACS NANO 10565-10566. 2018.

NIMS author(s)

WATANABE, Kenji
TANIGUCHI, Takashi

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-11-20 10:40:53 +0900Updated at: 2020-11-20 10:40:53 +0900