Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Sudipta Dubey, Simone Lisi, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Yannick J. Dappe, Vladimir Cherkez, César González, WATANABE, Kenji, Goutham Nayak, TANIGUCHI, Takashi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat.

ACS NANO 10565-10566. 2018.

NIMS著者

渡邊賢司
谷口尚

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2020-11-20 10:40:53 +0900 更新時刻: 2020-11-20 10:40:53 +0900