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著者名Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, César González, Yannick J. Dappe, WATANABE, Kenji, TANIGUCHI, Takashi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat.
タイトルCorrection to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
掲載誌名ACS NANO 10565-10566
出版社
出版年2018
言語English

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