HOME > その他の文献 > 書誌詳細Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged ImpuritiesSudipta Dubey, Simone Lisi, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Yannick J. Dappe, Vladimir Cherkez, César González, WATANABE, Kenji, Goutham Nayak, TANIGUCHI, Takashi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat. ACS NANO 10565-10566. 2018.NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2020-11-20 10:40:53 +0900更新時刻: 2020-11-20 10:40:53 +0900
