HOME > その他の文献 > 書誌詳細Stochastic behaviors of electrons through atom-vacancy defects in few atom-layer MoS2-FETs and neuromorphic device applicationK. Takaki, S. Furuichi, M. Kosugi, H. Arisawa, Y.-C. Lin, T. Taniguchi, K. Watanabe, Y. Nonaka, K. Suenaga, E. Saitoh, J. Haruyama. APL Electronic Devices 2 [2] 026106. 2026.https://doi.org/10.1063/5.0311764 Open Access AIP Publishing (Publisher) NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2026-04-14 03:04:56 +0900 更新時刻: 2026-07-17 04:38:37 +0900
