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Stochastic behaviors of electrons through atom-vacancy defects in few atom-layer MoS2-FETs and neuromorphic device application

K. Takaki, S. Furuichi, M. Kosugi, H. Arisawa, Y.-C. Lin, T. Taniguchi, K. Watanabe, Y. Nonaka, K. Suenaga, E. Saitoh, J. Haruyama.
APL Electronic Devices 2 [2] 026106. 2026.
https://doi.org/10.1063/5.0311764
Open Access AIP Publishing (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2026-04-14 03:04:56 +0900 Updated at: 2026-08-18 04:38:38 +0900

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