It has been demonstrated for the first time that, in order to achieve transistor characteristics in p-type tellurium oxide materials, simply depositing raw TeO₂ results in an insulating layer that does not function as a transistor; instead, the material must be deposited after mixing in a reducing agent. It was found that the reduction of the raw material causes nanocrystals of metallic tellurium to become dispersed within the amorphous tellurium oxide thin film, where hopping conduction occurs.

Created at: 2026-06-05 03:07:59 +0900 Updated at: 2026-10-09 04:30:35 +0900