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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2024年10月09日

309件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Kana Osonoe, Ryosuke Kano, Kun’ichi Miyazawa, Masaru Tachibana. Synthesis of C70 two-dimensional nanosheets by liquid–liquid interfacial precipitation method. Journal of Crystal Growth. 401 (2014) 458-461 10.1016/j.jcrysgro.2013.12.056
  • Kun'ichi Miyazawa, Ryota Kuriyama, Shuichi Shimomura, Takatsugu Wakahara, Masaru Tachibana. Growth and FIB-SEM analyses of C60 microtubes vertically synthesized on porous alumina membranes. Journal of Crystal Growth. 388 (2014) 5-11 10.1016/j.jcrysgro.2013.11.009
  • Masafumi Jo, Takaaki Mano, Yoshiki Sakuma, Kazuaki Sakoda. Size-dependent contact angle of Ga droplets on GaAs. Journal of Crystal Growth. 378 (2013) 5-7 10.1016/j.jcrysgro.2012.12.129
  • Martin Elborg, Takeshi Noda, Takaaki Mano, Masafumi Jo, Yoshiki Sakuma, Kazuaki Sakoda. Self-assembly of Ga droplets attached to GaAs quantum dots. Journal of Crystal Growth. 378 (2013) 53-56 10.1016/j.jcrysgro.2012.12.155
  • D.T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai. Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template. Journal of Crystal Growth. 381 (2013) 37-42 10.1016/j.jcrysgro.2013.07.012
  • T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki. Fabrication of InAs nanoscale rings by droplet epitaxy. Journal of Crystal Growth. 378 (2013) 529-531 10.1016/j.jcrysgro.2012.11.036
  • Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma, Hiroyuki Sakaki. Growth of GaSb quantum dots on GaAs (311)A. Journal of Crystal Growth. 378 (2013) 475-479 10.1016/j.jcrysgro.2012.11.020
  • Yuji Hino, Nobuhiko Ozaki, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto. Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source. Journal of Crystal Growth. 378 (2013) 501-505 10.1016/j.jcrysgro.2012.12.077
  • N. Ozaki, Y. Nakatani, S. Ohkouchi, N. Ikeda, Y. Sugimoto, K. Asakawa, E. Clarke, R.A. Hogg. Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source. Journal of Crystal Growth. 378 (2013) 553-557 10.1016/j.jcrysgro.2012.12.110
  • Kaoru Toko, Naoki Fukata, Koki Nakazawa, Masashi Kurosawa, Noritaka Usami, Masanobu Miyao, Takashi Suemasu. Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates. Journal of Crystal Growth. 372 (2013) 189-192 10.1016/j.jcrysgro.2013.03.031
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