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NIMS Awardシンポジウム2026

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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2026年11月10日

9335件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Jiří Pospíšil, Hideaki Kitazawa, Ajeya Gupta, Saori Toyoizumi, Akira Tamaki, Martin Diviš, Vladimír Sechovský. Magnetism in GdCo2B2 Studied on a Single Crystal. Journal of the Physical Society of Japan. 83 [5] (2014) 054713 10.7566/jpsj.83.054713
  • Jun-ichi Fujita, Masashi Tachi, Katsuhisa Murakami, Hidehiro Sakurai, Yuki Morita, Shuhei Higashibayashi, Masaki Takeguchi. Beam-induced graphitic carbon cage transformation from sumanene aggregates. Applied Physics Letters. 104 [4] (2014) 043107 10.1063/1.4863739
  • Matías Bejas, Andrés Greco, Hiroyuki Yamase. Strong particle-hole asymmetry of charge instabilities in doped Mott insulators. New Journal of Physics. 16 [12] (2014) 123002 10.1088/1367-2630/16/12/123002 Open Access
  • Wipakorn Jevasuwan, Tatsuro Maeda, Noriyuki Miyata, Minoru Oda, Toshifumi Irisawa, Tsutomu Tezuka, Tetsuji Yasuda. Self-limiting growth of ultrathin Ga2O3for the passivation of Al2O3/InGaAs interfaces. Applied Physics Express. 7 [1] (2014) 011201 10.7567/apex.7.011201
  • Minoru Oda, Toshifumi Irisawa, Wipakorn Jevasuwan, Tatsuro Maeda, Yuuichi Kamimuta, Osamu Ichikawa, Toshio Ishihara, Takenori Osada, Tsutomu Tezuka. Electron mobility improvement by in situ annealing before deposition of HfO2gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal–insulator–semiconductor field-effect transistor. Applied Physics Express. 7 [6] (2014) 061202 10.7567/apex.7.061202
  • Takashi Yatsui, Daisuke Takeuchi, Satoshi Koizumi, Kazuki Sato, Kohei Tsuzuki, Takayuki Iwasaki, Mutsuko Hatano, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hideyo Okushi, Satoshi Yamasaki. Polarization-controlled dressed-photon-phonon etching of patterned diamond structures. physica status solidi (a). 211 [10] (2014) 2339-2342 10.1002/pssa.201431161
  • Daisuke Takeuchi, Satoshi Koizumi, Toshiharu Makino, Hiromitsu Kato, Hideyo Okushi, Hiromichi Ohashi, Satoshi Yamasaki. Investigation of electron emission site of p–i–n diode-type emitters with negative electron affinity. Japanese Journal of Applied Physics. 53 [5S1] (2014) 05FP07 10.7567/jjap.53.05fp07
  • Chuan Liu, Yong Xu, Zhihong Liu, Hoi Nok Tsao, Klaus Müllen, Takeo Minari, Yong-Young Noh, Henning Sirringhaus. Improving solution-processed n-type organic field-effect transistors by transfer-printed metal/semiconductor and semiconductor/semiconductor heterojunctions. Organic Electronics. 15 [8] (2014) 1884-1889 10.1016/j.orgel.2014.04.032
  • Tadashi Machida, Yuita Fujisawa, Masanori Nagao, Satoshi Demura, Keita Deguchi, Yoshikazu Mizuguchi, Yoshihiko Takano, Hideaki Sakata. “Checkerboard Stripe” Electronic State on Cleaved Surface of NdO0.7F0.3BiS2 Probed by Scanning Tunneling Microscopy. Journal of the Physical Society of Japan. 83 [11] (2014) 113701 10.7566/jpsj.83.113701
  • Masanori Nagao, Masashi Tanaka, Satoshi Watauchi, Isao Tanaka, Yoshihiko Takano. Superconducting Anisotropies of F-Substituted LaOBiSe2 Single Crystals. Journal of the Physical Society of Japan. 83 [11] (2014) 114709 10.7566/jpsj.83.114709
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