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著者名Minoru Oda, Toshifumi Irisawa, Wipakorn Jevasuwan, Tatsuro Maeda, Yuuichi Kamimuta, Osamu Ichikawa, Toshio Ishihara, Takenori Osada, Tsutomu Tezuka.
タイトルElectron mobility improvement by in situ annealing before deposition of HfO2gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal–insulator–semiconductor field-effect transistor
掲載誌名Applied Physics Express 7 [6] 061202
ISSN: 18820786 18820778
発表年2014
言語English
ESIでのカテゴリPHYSICS
DOIhttps://doi.org/10.7567/apex.7.061202
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