Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Xiujun Wang; Sannian Song; Haomin Wang; Tianqi Guo; Yuan Xue; Ruobing Wang; HuiShan Wang; Lingxiu Chen; Chengxin Jiang; Chen Chen; Zhiyuan Shi; Tianru Wu; Wenxiong Song; Sifan Zhang; Kenji Watanabe; Takashi Taniguchi; Zhitang Song; Xiaoming Xie; Xiujun Wang; Sannian Song; Haomin Wang; Tianqi Guo; Yuan Xue; Ruobing Wang; HuiShan Wang; Lingxiu Chen; Chengxin Jiang; Chen Chen; Zhiyuan Shi; Tianru Wu; Wenxiong Song; Sifan Zhang; Kenji Watanabe; Takashi Taniguchi; Zhitang Song; Xiaoming Xie

doi:10.1002/advs.202202222

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Xiujun Wang, Sannian Song, Haomin Wang, Tianqi Guo, Yuan Xue, Ruobing Wang, HuiShan Wang, Lingxiu Chen, Chengxin Jiang, Chen Chen, Zhiyuan Shi, Tianru Wu, Wenxiong Song, Sifan Zhang, Kenji Watanabe, Takashi Taniguchi, Zhitang Song, Xiaoming Xie.

Advanced Science 9 [25] 2202222. 2022.

https://doi.org/10.1002/advs.202202222

Open Access

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-09-14 03:18:35 +0900Updated at: 2024-03-31 16:55:30 +0900