Electron transport in dual-gated three-layer
MoS2 (Electron transport in dual-gated three-layer MoS2)
Michele Masseroni, Tim Davatz, Riccardo Pisoni, Folkert K. de Vries, Peter Rickhaus, Takashi Taniguchi, Kenji Watanabe, Vladimir Fal'ko, Thomas Ihn, Klaus Ensslin.