Electron transport in dual-gated three-layer 
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Michele Masseroni; Tim Davatz; Riccardo Pisoni; Folkert K. de Vries; Peter Rickhaus; Takashi Taniguchi; Kenji Watanabe; Vladimir Fal'ko; Thomas Ihn; Klaus Ensslin; Michele Masseroni; Tim Davatz; Riccardo Pisoni; Folkert K. de Vries; Peter Rickhaus; Takashi Taniguchi; Kenji Watanabe; Vladimir Fal'ko; Thomas Ihn; Klaus Ensslin

doi:10.1103/physrevresearch.3.023047

Electron transport in dual-gated three-layer MoS2
(Electron transport in dual-gated three-layer MoS2)

Michele Masseroni, Tim Davatz, Riccardo Pisoni, Folkert K. de Vries, Peter Rickhaus, Takashi Taniguchi, Kenji Watanabe, Vladimir Fal'ko, Thomas Ihn, Klaus Ensslin.

Physical Review Research 3 [2] 023047. 2021.

https://doi.org/10.1103/physrevresearch.3.023047

Open Access American Physical Society (APS) (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-06-23 03:00:20 +0900 Updated at: 2026-10-30 07:23:16 +0900

Electron transport in dual-gated three-layer MoS2(Electron transport in dual-gated three-layer MoS2)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Electron transport in dual-gated three-layer MoS2
(Electron transport in dual-gated three-layer MoS2)