Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In<sub>2</sub>Se<sub>3</sub> for Nonvolatile Memory

Zhengxin Li; Yangyang Chen; Jian Yuan; Wanting Xu; Xiaoqing Yang; Haotian Wang; Chuanbing Cai; Takashi Taniguchi; Kenji Watanabe; Yanfeng Guo; Zhiyong Liu; Wei Ren; Zhengxin Li; Yangyang Chen; Jian Yuan; Wanting Xu; Xiaoqing Yang; Haotian Wang; Chuanbing Cai; Takashi Taniguchi; Kenji Watanabe; Yanfeng Guo; Zhiyong Liu; Wei Ren

doi:10.1021/acsaelm.4c00136

HOME > 論文 > 書誌詳細

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In₂Se₃ for Nonvolatile Memory

Zhengxin Li, Yangyang Chen, Jian Yuan, Wanting Xu, Xiaoqing Yang, Haotian Wang, Chuanbing Cai, Takashi Taniguchi, Kenji Watanabe, Yanfeng Guo, Zhiyong Liu, Wei Ren.

ACS Applied Electronic Materials 6 [4] 2507-2513. 2024.

https://doi.org/10.1021/acsaelm.4c00136

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2024-12-24 03:17:01 +0900 更新時刻: 2026-05-10 04:32:05 +0900

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In2Se3 for Nonvolatile Memory

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In₂Se₃ for Nonvolatile Memory