Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

著者	Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, James S Speck.
掲載誌名	Semiconductor Science and Technology 33 [1] 015013 ISSN: 02681242, 13616641, 09532048, 13616668 ESIでのカテゴリ: PHYSICS
出版社	IOP Publishing
発表年	2018
言語	English
DOI	https://doi.org/10.1088/1361-6641/aa9c4d
この文献をMendeleyにインポート