Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
(プラズマMBEによる (001) b-Ga2O3 の成長)

Yuichi Oshima, Elaheh Ahmadi, Stephen Kaun, Feng Wu, James S Speck.

Semiconductor Science and Technology 33 [1] 015013. 2018.

https://doi.org/10.1088/1361-6641/aa9c4d

Open Access Materials Data Repository (MDR)

NIMS著者

大島祐一

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy

作成時刻: 2017-12-20 20:36:34 +0900更新時刻: 2024-03-30 00:41:35 +0900

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