Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy
(プラズマMBEによる (001) b-Ga2O3 の成長)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-12-20 20:36:34 +0900Updated at: 2024-03-30 00:41:35 +0900