Metal–insulator transition of valence-controlled VO2thin film prepared by RF magnetron sputtering using oxygen radical | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Metal–insulator transition of valence-controlled VO2thin film prepared by RF magnetron sputtering using oxygen radical
(価数制御したVO2薄膜の金属-絶縁体転移)

Takaaki Suetsugu, Yuichi Shimazu, Takashi Tsuchiya, Masaki Kobayashi, Makoto Minohara, Enju Sakai, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi.

Japanese Journal of Applied Physics 55 [6S1] 06GJ11. 2016.

https://doi.org/10.7567/jjap.55.06gj11

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土屋敬志

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-10-26 15:43:43 +0900更新時刻: 2024-04-01 22:57:59 +0900

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