Metal–insulator transition of valence-controlled VO2thin film prepared by RF magnetron sputtering using oxygen radical
(価数制御したVO2薄膜の金属-絶縁体転移)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2016-10-26 15:43:43 +0900Updated at: 2024-04-01 22:57:59 +0900