Atomistic mechanism of graphene growth on a SiC substrate: Large-scale molecular dynamics simulations based on a new charge-transfer bond-order type potential | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Atomistic mechanism of graphene growth on a SiC substrate: Large-scale molecular dynamics simulations based on a new charge-transfer bond-order type potential

So Takamoto, Takahiro Yamasaki, Jun Nara, Takahisa Ohno, Chioko Kaneta, Asuka Hatano, Satoshi Izumi.

Physical Review B 97 [12] 125411. 2018.

https://doi.org/10.1103/physrevb.97.125411

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奈良純

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2019-03-01 11:36:07 +0900更新時刻: 2024-03-31 00:58:42 +0900

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