HOME > 論文 > 書誌詳細Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect TransistorsTeerayut Uwanno, TANIGUCHI, Takashi, WATANABE, Kenji, Kosuke Nagashio. ACS APPLIED MATERIALS & INTERFACES 10 [34] . 2018.NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-04 09:36:23 +0900更新時刻: 2019-05-10 18:54:50 +0900