Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors | SAMURAI, NIMS Researchers Directory Service

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Electrically Inert h-BN/Bilayer Graphene Interface in All-Two-Dimensional Heterostructure Field Effect Transistors

Teerayut Uwanno, TANIGUCHI, Takashi, WATANABE, Kenji, Kosuke Nagashio.

ACS APPLIED MATERIALS & INTERFACES 10 [34] . 2018.

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Created at: 2019-03-04 09:36:23 +0900Updated at: 2019-05-10 18:54:50 +0900

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