High Performance and Ultra-Low Noise Two-Dimensional Heterostructure Field–Effect Transistors with One-Dimensional Electrical Contacts

Aroop K. Behera; Charles Thomas Harris; Douglas V. Pete; Collin J. Delker; Per Erik Vullum; Marta B. Muniz; Ozhan Koybasi; Takashi Taniguchi; Kenji Watanabe; Branson D. Belle; Suprem R. Das

doi:10.1021/acsaelm.1c00595

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High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts
(High Performance and Ultra-Low Noise Two-Dimensional Heterostructure Field–Effect Transistors with One-Dimensional Electrical Contacts)

Aroop K. Behera, Charles Thomas Harris, Douglas V. Pete, Collin J. Delker, Per Erik Vullum, Marta B. Muniz, Ozhan Koybasi, Takashi Taniguchi, Kenji Watanabe, Branson D. Belle, Suprem R. Das.

ACS Applied Electronic Materials 3 [9] 4126-4134. 2021.

https://doi.org/10.1021/acsaelm.1c00595

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-10-06 03:32:42 +0900更新時刻: 2024-03-31 14:34:23 +0900

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts(High Performance and Ultra-Low Noise Two-Dimensional Heterostructure Field–Effect Transistors with One-Dimensional Electrical Contacts)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts
(High Performance and Ultra-Low Noise Two-Dimensional Heterostructure Field–Effect Transistors with One-Dimensional Electrical Contacts)