Nonequilibrium Dopant Activation and Emission Wavelength Modulation in Heavily Sb-Doped Ge(Si) Thin Films by High-Speed Continuous-Wave Laser Annealing | SAMURAI, NIMS Researchers Directory Service

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Nonequilibrium Dopant Activation and Emission Wavelength Modulation in Heavily Sb-Doped Ge(Si) Thin Films by High-Speed Continuous-Wave Laser Annealing

Yuta Goto, Yuta Ito, Hiromu Kudo, Atsushi Ogura, Ryo Matsumura, Naoki Fukata.

ACS Applied Electronic Materials 8 [17] 7279-7289. 2026.

https://doi.org/10.1021/acsaelm.6c00555

Open Access American Chemical Society (ACS) (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2026-10-23 03:06:04 +0900 Updated at: 2026-10-24 03:06:06 +0900

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