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Resistive switching characteristics in memristors with Al2O3/TiO2and TiO2/Al2O3bilayers
(Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers)

Liudmila Alekseeva, Toshihide Nabatame, Toyohiro Chikyow, Anatolii Petrov.
Japanese Journal of Applied Physics 55 [8S2] 08PB02. 2016.
https://doi.org/10.7567/jjap.55.08pb02

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    作成時刻: 2016-10-26 15:26:50 +0900更新時刻: 2024-04-01 21:50:56 +0900

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