Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

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Changhee Lee, Servin Rathi, Muhammad Atif Khan, Dongsuk Lim, Yunseob Kim, Sun Jin Yun, Doo-Hyeb Youn, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

Nanotechnology 29 [33] 335202. 2018.

作成時刻: 2018-08-22 15:07:07 +0900更新時刻: 2024-04-02 00:02:13 +0900