Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates

Changhee Lee, Servin Rathi, Muhammad Atif Khan, Dongsuk Lim, Yunseob Kim, Sun Jin Yun, Doo-Hyeb Youn, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

Nanotechnology 29 [33] 335202. 2018.

Created at: 2018-08-22 15:07:07 +0900Updated at: 2024-05-03 04:35:17 +0900