HOME > 論文 > 書誌詳細Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters(Hysteresis-free hexagonal boron nitride encapsulated two-dimensional semiconductor transistors, NMOS and CMOS inverters)Shuai Liu, Kai Yuan, Xiaolong Xu, Ruoyu Yin, Der-Yuh Lin, Yanping Li, Kenji Watanabe, Takashi Taniguchi, Yongqiang Meng, Lun Dai, Yu Ye. Advanced Electronic Materials 5 [2] 1800419. 2019.https://doi.org/10.1002/aelm.201800419 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-04-17 03:13:00 +0900更新時刻: 2024-03-31 00:56:34 +0900