Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters
(Hysteresis-free hexagonal boron nitride encapsulated two-dimensional semiconductor transistors, NMOS and CMOS inverters)

著者	Shuai Liu, Kai Yuan, Xiaolong Xu, Ruoyu Yin, Der-Yuh Lin, Yanping Li, Kenji Watanabe, Takashi Taniguchi, Yongqiang Meng, Lun Dai, Yu Ye.
掲載誌名	Advanced Electronic Materials 5 [2] 1800419 ISSN: 2199160X ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Wiley
発表年	2019
言語	English
DOI	https://doi.org/10.1002/aelm.201800419
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Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters(Hysteresis-free hexagonal boron nitride encapsulated two-dimensional semiconductor transistors, NMOS and CMOS inverters)