HOME > Article > Detail (Invited) Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h -BN Insulator (Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator)Kosuke Nagashio, Yoshiaki Hattori, Nobuaki Takahashi, Takashi Taniguchi, Kenji Watanabe, Jianfeng Bao, Wataru Norimatsu, Michiko Kusunoki. ECS Transactions 79 [1] 91-97. 2017.https://doi.org/10.1149/07901.0091ecst NIMS author(s)TANIGUCHI, TakashiWATANABE, KenjiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-07-05 22:41:04 +0900Updated at: 2025-01-09 04:33:47 +0900