Diffusion model of gallium in single-crystal ZnO proposed from analysis of concentration-dependent profiles based on the Fermi-level effect | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Diffusion model of gallium in single-crystal ZnO proposed from analysis of concentration-dependent profiles based on the Fermi-level effect

Tsubasa Nakagawa, Isao Sakaguchi, Masashi Uematsu, Yoshiyuki Sato, Naoki Ohashi, Hajime Haneda, Yuichi Ikuhara.

Japanese Journal of Applied Physics 46 [7A] 4099-4101. 2007.

https://doi.org/10.1143/jjap.46.4099

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作成時刻: 2016-05-24 15:17:05 +0900更新時刻: 2025-03-11 04:21:53 +0900

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