HOME > Article > DetailDiffusion model of gallium in single-crystal ZnO proposed from analysis of concentration-dependent profiles based on the Fermi-level effectTsubasa Nakagawa, Isao Sakaguchi, Masashi Uematsu, Yoshiyuki Sato, Naoki Ohashi, Hajime Haneda, Yuichi Ikuhara. Japanese Journal of Applied Physics 46 [7A] 4099-4101. 2007.https://doi.org/10.1143/jjap.46.4099 NIMS author(s)SAKAGUCHI, IsaoOHASHI, NaokiHANEDA, HajimeFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 15:17:05 +0900Updated at: 2024-09-05 04:24:15 +0900