HOME > 論文 > 書誌詳細Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates - A theoretical aKenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii, Yasushi Akasaka, Kiyomi Nakajima, Mitsuru Konno, Toyohiro Chikyow, Hiroshi Kitajima, Tsunetoshi Arikado. Japanese Journal of Applied Physics 43 [No. 11A] L1413-L1415. 2004.https://doi.org/10.1143/jjap.43.l1413 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:41:08 +0900更新時刻: 2024-04-01 23:56:36 +0900
