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Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates - A theoretical a

Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii, Yasushi Akasaka, Kiyomi Nakajima, Mitsuru Konno, Toyohiro Chikyow, Hiroshi Kitajima, Tsunetoshi Arikado.
Japanese Journal of Applied Physics 43 [No. 11A] L1413-L1415. 2004.
https://doi.org/10.1143/jjap.43.l1413

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