HOME > 論文 > 書誌詳細Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporationN. Umezawa, K. Shiraishi, S. Sugino, A. Tachibana, K. Ohmori, K. Kakushima, H. Iwai, T. Chikyow, T. Ohno, Y. Nara, K. Yamada. Applied Physics Letters 91 [13] 132904. 2007.https://doi.org/10.1063/1.2789392 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:20:27 +0900更新時刻: 2024-04-01 18:30:09 +0900
