HOME > Article > DetailSuppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporationN. Umezawa, K. Shiraishi, S. Sugino, A. Tachibana, K. Ohmori, K. Kakushima, H. Iwai, T. Chikyow, T. Ohno, Y. Nara, K. Yamada. Applied Physics Letters 91 [13] 132904. 2007.https://doi.org/10.1063/1.2789392 NIMS author(s)CHIKYO, ToyohiroOHNO, TakahisaFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2016-05-24 15:20:27 +0900 Updated at :2020-11-16 23:02:12 +0900