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Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

N. Umezawa, K. Shiraishi, S. Sugino, A. Tachibana, K. Ohmori, K. Kakushima, H. Iwai, T. Chikyow, T. Ohno, Y. Nara, K. Yamada.
Applied Physics Letters 91 [13] 132904. 2007.

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