HOME > 論文 > 書誌詳細A Redox‐Based Ion‐Gating Reservoir, Utilizing Double Reservoir States in Drain and Gate Nonlinear ResponsesTomoki Wada, Daiki Nishioka, Wataru Namiki, Takashi Tsuchiya, Tohru Higuchi, Kazuya Terabe. Advanced Intelligent Systems 5 [9] 2300123. 2023.https://doi.org/10.1002/aisy.202300123 Open Access Wiley (Publisher) NIMS著者西岡 大貴並木 航土屋 敬志寺部 一弥Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-09-27 03:18:18 +0900 更新時刻: 2026-04-24 09:29:48 +0900
