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Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu.
Applied Physics Letters 106 [15] 152104. 2015.

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    作成時刻: 2016-05-24 17:48:11 +0900 更新時刻: 2026-11-09 07:54:44 +0900

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