Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

著者	Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu.
掲載誌名	Applied Physics Letters 106 [15] 152104 ISSN: 00036951, 10773118 ESIでのカテゴリ: PHYSICS
出版社	AIP Publishing
発表年	2015
言語	English
DOI	https://doi.org/10.1063/1.4918282
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