HOME > 論文 > 書誌詳細Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity statesJunjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu. Applied Physics Letters 106 [15] 152104. 2015.https://doi.org/10.1063/1.4918282 Open Access NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻 :2016-05-24 17:48:11 +0900 更新時刻 :2022-10-22 02:18:47 +0900