Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states | SAMURAI, NIMS Researchers Directory Service

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Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu.

Applied Physics Letters 106 [15] 152104. 2015.

https://doi.org/10.1063/1.4918282

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:48:11 +0900Updated at: 2024-04-02 06:18:10 +0900

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