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Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

AIP Advances 12 [1] 015203. 2022.
Open Access AIP Publishing (Publisher)

NIMS著者


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    作成時刻: 2022-01-26 10:06:44 +0900更新時刻: 2024-07-03 08:21:04 +0900

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