Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide.

AIP Advances 12 [1] 015203. 2022.

https://doi.org/10.1063/5.0076706

Open Access AIP Publishing (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-01-26 10:06:44 +0900更新時刻: 2024-10-06 08:27:47 +0900

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