Wake-up-free properties and high fatigue resistance of Hf<sub><i>x</i></sub>Zr<sub>1−<i>x</i></sub>O<sub>2</sub>-based metal–ferroelectric–semiconductor using top ZrO<sub>2</sub> nucleation layer at low thermal budget (300 °C) | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)

Takashi Onaya, Toshihide Nabatame, Mari Inoue, Tomomi Sawada, Hiroyuki Ota, Yukinori Morita.

APL Materials 10 [5] 051110. 2022.

https://doi.org/10.1063/5.0091661

Open Access AIP Publishing (Publisher)

NIMS author(s)

NABATAME, Toshihide

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-05-27 03:12:10 +0900Updated at: 2024-03-31 16:38:53 +0900

▲ Go to the top of this page