Atomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs
(Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2016-05-24 17:46:51 +0900更新時刻: 2024-03-31 18:46:11 +0900