Atomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs
(Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs)
著者 | N Takahashi, K Watanabe, T Taniguchi, K Nagashio. |
---|---|
掲載誌名 | Nanotechnology 26 [17] 175708 ISSN: 13616528, 09574484 ESIでのカテゴリ: MATERIALS SCIENCE |
出版社 | IOP Publishing |
発表年 | 2015 |
言語 | English |
DOI | https://doi.org/10.1088/0957-4484/26/17/175708 |
この文献をMendeleyにインポート | ![]() |