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Atomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs
(Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs)

N Takahashi, K Watanabe, T Taniguchi, K Nagashio.
Nanotechnology 26 [17] 175708. 2015.

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    作成時刻: 2016-05-24 17:46:51 +0900更新時刻: 2024-07-03 09:29:12 +0900

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