HOME > Article > DetailAtomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs(Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs)N Takahashi, K Watanabe, T Taniguchi, K Nagashio. Nanotechnology 26 [17] 175708. 2015.https://doi.org/10.1088/0957-4484/26/17/175708 Open Access NIMS author(s)WATANABE, KenjiTANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2016-05-24 17:46:51 +0900 Updated at :2022-10-22 02:12:12 +0900