Atomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs
(Atomic layer deposition of high-k Y2O3 on h-BN for a gate stack in graphene FETs)
| Author(s) | N Takahashi, K Watanabe, T Taniguchi, K Nagashio. |
|---|---|
| Journal title | Nanotechnology 26 [17] 175708 ISSN: 13616528, 09574484 ESI category: MATERIALS SCIENCE |
| Publisher | IOP Publishing |
| Year of publication | 2015 |
| Language | English |
| DOI | https://doi.org/10.1088/0957-4484/26/17/175708 |
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