Tellurium-Assisted Recrystallization of MoTe<sub>2</sub> for Improved Electronic and Optoelectronic Properties

Inayat Uddin; Vilas Patil; Hai Yen Le Thi; Nhat Anh Nguyen Phan; Amirhossein Nazarian-Firouzabadi; Kenji Watanabe; Takashi Taniguchi; Muhammad Atif Khan; Gil-Ho Kim; Inayat Uddin; Vilas Patil; Hai Yen Le Thi; Nhat Anh Nguyen Phan; Amirhossein Nazarian-Firouzabadi; Kenji Watanabe; Takashi Taniguchi; Muhammad Atif Khan; Gil-Ho Kim

doi:10.1021/acsaelm.5c00723

Tellurium-Assisted Recrystallization of MoTe₂ for Improved Electronic and Optoelectronic Properties

Inayat Uddin, Vilas Patil, Hai Yen Le Thi, Nhat Anh Nguyen Phan, Amirhossein Nazarian-Firouzabadi, Kenji Watanabe, Takashi Taniguchi, Muhammad Atif Khan, Gil-Ho Kim.

ACS Applied Electronic Materials 6033-6040. 2025.

https://doi.org/10.1021/acsaelm.5c00723

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2025-07-15 03:07:29 +0900 Updated at: 2026-09-30 06:06:36 +0900

Tellurium-Assisted Recrystallization of MoTe2 for Improved Electronic and Optoelectronic Properties

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Tellurium-Assisted Recrystallization of MoTe₂ for Improved Electronic and Optoelectronic Properties