HOME > 論文 > 書誌詳細Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrateShota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata. Applied Physics Letters 124 [26] 263101. 2024.https://doi.org/10.1063/5.0209432 NIMS著者渡邊 賢司谷口 尚宮田 耕充Materials Data Repository (MDR)上の本文・データセット作成時刻: 2025-02-23 03:07:02 +0900 更新時刻: 2025-05-27 04:32:31 +0900