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Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Shota Toida, Shota Yamaguchi, Takahiko Endo, Yusuke Nakanishi, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio, Yasumitsu Miyata.
Applied Physics Letters 124 [26] 263101. 2024.
https://doi.org/10.1063/5.0209432

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    Created at: 2025-02-23 03:07:02 +0900 Updated at: 2025-06-28 04:32:34 +0900

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