Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma, Shinya Aikawa, Wei Ou-Yang, Xu Gao, Takio Kizu, Meng-Fang Lin, Akihiko Fujiwara, Toshihide Nabatame, Kazuhito Tsukagoshi.

Applied Physics Letters 106 [4] 042106. 2015.

https://doi.org/10.1063/1.4907285

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:45:07 +0900 更新時刻: 2026-10-01 04:18:40 +0900

▲ページトップへ移動