Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Nobuhiko Mitoma, Shinya Aikawa, Wei Ou-Yang, Xu Gao, Takio Kizu, Meng-Fang Lin, Akihiko Fujiwara, Toshihide Nabatame, Kazuhito Tsukagoshi.

Applied Physics Letters 106 [4] 042106. 2015.

https://doi.org/10.1063/1.4907285

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作成時刻: 2016-05-24 17:45:07 +0900更新時刻: 2024-04-01 19:24:43 +0900

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