Characterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current technique | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Characterization of p-n junctions in wide-gap semiconductors using a cathodoluminescence/electron-beam-induced current technique

SEKIGUCHI, Takashi, Yuan, Xiaoli, KOIZUMI, Satoshi, TANIGUCHI, Takashi.

Beam Injection Based Nanocharacterization of Advanced Materials 139-152. 2008.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 15:37:54 +0900 Updated at: 2018-12-15 00:02:58 +0900

▲ Go to the top of this page