Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

Sangwoo Kang; Nitin Prasad; Hema C. P. Movva; Amritesh Rai; Kyounghwan Kim; Xuehao Mou; Takashi Taniguchi; Kenji Watanabe; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee; Sangwoo Kang; Nitin Prasad; Hema C. P. Movva; Amritesh Rai; Kyounghwan Kim; Xuehao Mou; Takashi Taniguchi; Kenji Watanabe; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1021/acs.nanolett.6b01646

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Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Xuehao Mou, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee.

Nano Letters 16 [8] 4975-4981. 2016.

https://doi.org/10.1021/acs.nanolett.6b01646

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作成時刻: 2017-11-15 21:39:03 +0900 更新時刻: 2026-10-29 05:37:31 +0900